CGD says that the multi-level design proposed by IFPEN reveals several benefits of ICeGaN including increased efficiency, higher switching frequencies, reduced EMI, enhanced thermal management, as ...

The company says this first standard-specification SiC-MOSFET will enable the company to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles ...

As part of the Biden-Harris Administration’s Investing in America agenda, the Department of Energy (DOE) has announced a $544 million loan to SK Siltron CCS, LLC to expand Ameri ...

Violumas, a US-based provider of high-power UV LEDs, has launched 275nm and 265nm LEDs in mid-power, high-power, and high-density packages. The radiant flux of the LEDs is 35-50 percent higher than ...

Compound Semiconductor™ is an Angel Business Communications publication.

At Electronica 2024, Chinese SiC wafer company SICC will exhibit what is thought be the first 300mm N-type SiC substrate. SICC already makes 150mm and 200mm N-type conductive SiC, and high-purity semi ...

Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

Compound Semiconductor™ is an Angel Business Communications publication.

Companies to use X-Celeprint's micro-transfer printing to build next gen transceivers with silicon photonics and InP integration Specialist foundry X-FAB, and InP photonics foundry SMART Photonics ...

X-FAB and SMART Photonics recently signed a Memorandum of Understanding to formalise their collaboration. The aim is to ...

Toshiba Electronics Europe has announced early test samples in bare die format of new 1200V SiC MOSFETs with low ...